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| STGW30NC120HD N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESHTM IGBT TARGET SPECIFICATION General features Type STGW30NC120HD VCES 1200V VCE(sat) (Max) @ 25C < 2.8V IC 30A LOW ON-LOSSES 3 LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW GATE CHARGE VERY HIGH FREQUENCY OPERATION LATCH CURRENT FREE OPERATION TO-247 2 1 Internal schematic diagram Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. Applications HIGH FREQUENCY MOTOR CONTROL U.P.S WELDING EQUIPMENT INDUCTION HEATING Order codes Sales Type STGW30NC120HD Marking GW30NC120HD Package TO-247 Packaging TUBE Rev 1 1/9 www.st.com 9 November 2005 This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice 1 Electrical ratings STGW30NC120HD 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Collector-Emitter Voltage (VGS = 0) Collector Current (continuous) at 25C Collector Current (continuous) at 100C Collector Current (pulsed) Gate-Emitter Voltage Total Dissipation at TC=25C Diode RMS Forward Current at TC=25C Operating Junction Temperature - 55 to 150 Tstg Storage Temperature C Value 1200 60 30 120 20 200 200 Unit V A A A V W Symbol VCES IC Note 2 IC Note 2 ICM Note 1 VGE PTOT If Tj Table 2. Thermal resistance Min. Typ. --Max. 0.625 50 Unit C/W C/W Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient --- 2/9 STGW30NC120HD 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 3. Symbol VBR(CES) VCE(SAT) VGE(th) ICES Static Parameter Collectro-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Gate Threshold Voltage Collector-Emitter Leakage Current (VCE = 0) Gate-Emitter Leakage Current (VCE = 0) Forward Transconductance Test Conditions IC = 250A, V GE = 0 VGE= 15V, IC= 20A, Tj= 25C VGE= 15V, IC= 20A, Tj= 125C VCE= VGE, IC= 250A VGE =Max Rating,Tc=25C VGE =Max Rating, Tc=125C VGE = 20V , VCE = 0 VCE = 25V, IC= 25A TBD 5 Min. 1200 2.4 2 2.9 Typ. Max. Unit V V V V A A nA S 7 10 100 100 IGES gfs Table 4. Symbol C ies C oes Cres Qg Qge Qgc Dynamic Parameter Test Conditions Min. Typ. TBD TBD TBD TBD TBD TBD TBD Max. Unit pF pF pF nC nC nC Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE =960V, IC=20A,VGE =15V 3/9 2 Electrical characteristics STGW30NC120HD Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Off Voltage Rise Time Turn-off Delay Time Current Fall Time Cross-over Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions VCC = 960V, IC = 20A RG= 10, VGE= 15V, Tj= 25C (see Figure 3) VCC = 960V, IC = 20A RG= 10, VGE= 15V, Tj= 125C (see Figure 3) VCC = 960V, IC = 20A RG= 10, VGE= 15V, Tj= 25C (see Figure 3) VCC = 960V, IC = 20A RG= 10, VGE= 15V, Tj= 125C (see Figure 3) Min. Typ. TBD 62 TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 6. Symbol Eon Note 3 Eoff Note 4 Ets Eon Note 3 Eoff Note 4 Ets Switching energy (inductive load) Parameter Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Test Conditions VCC = 960V, IC = 20A RG= 10, V GE= 15V, Tj= 25C (see Figure 3) VCC = 960V, IC = 20A RG= 10, V GE= 15V, Tj= 125C (see Figure 3) Min. Typ. TBD TBD TBD TBD TBD TBD Max. Unit J J J J J J Table 7. Symbol Vf trr Qrr Irrm Collector-emitter diode Parameter Forward On-Voltage Test Conditions If = 12A If = 12A, Tj = 125 C Min. Typ. 2.4 1.4 TBD TBD TBD Max. 2.9 Unit V V ns nC A If = 12A, VR = 27V, Reverse Recovery Time Reverse Recovery Charge Tj = 125 C, di/dt = 100A/s Reverse Recovery Current (see Figure 4) (1)Pulse width limited by max junction temperature (2) Calculated according to the iterative formula: T -T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C (3) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) (4) Turn-off losses include also the tail of the collector current 4/9 STGW30NC120HD 3 Test Circuits 3 Test Circuits Test Circuit for Inductive Load Switching Figure 2. Gate Charge Test Circuit Figure 1. Figure 3. Switching Waveform Figure 4. Diode Recovery Time Waveform 5/9 4 Package mechanical data STGW30NC120HD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STGW30NC120HD 4 Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 7/9 5 Revision History STGW30NC120HD 5 Revision History Date 14-Nov-2005 Revision 1 Initial release. Changes 8/9 STGW30NC120HD 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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